Edit your profile

Leonelli, Richard

Full Professor


  • Telephone 514-343-7274 Pav. PAVILLON ROGER-GAUDRY \ Ext. D-424
  • Telephone 514-343-7274 Pav. PAVILLON ROGER-GAUDRY \ Ext. D-424


Leonelli, Richard

Research expertise

When a semiconductor material absorbs a photon, an electron is excited into the conduction band, leaving a hole in the valence band. The Coulomb interaction between the electron and the hole generates a bound state called an exciton, which largely controls the optical properties of semiconductors. In addition, when the environment is structured on a nanometric scale, the optical response of the semiconductors is radically altered by quantum confinement.

My research program revolves around the dynamics of excitons when they are created in nanostructured environments, so as to describe how the energy is absorbed and redistributed as part of a representation in terms of collective excitations. Although the subject is fundamental in nature, it is closely related to the development of excitonics, an emergent field that aims to design and manufacture better optical devices for applications ranging from lighting to quantum computing.

Areas of expertise


V. Cardin, L.-I. Dion-Bertrand, P. Grégoire, H. P. T. Nguyen, M. Sakowicz, Z. Mi, C. Silva et R. Leonelli, Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111). Nanotechnology 24, 045702 (2013).

F. Provencher, M. Sakowicz, C.-N. Brosseau, G. Latini, S. Beaupré, M. Leclerc, L. X. Reynolds, S. A. Haque, R. Leonelli et C. Silva, Slow geminate-charge-pair recombination dynamics at polymer:fullerene heterojunctions in efficient organic solar cells. Polymer Physics 50, 1395 (2012)

S. Turcotte, J.-N. Beaudry, R. A. Masut, P. Desjardins, G. Bentoumi et R. Leonelli, Abnormal broadening of the optical transitions in GaAsN/GaAs quantum wells. Phys. Rev. B 85, 033304 (2012).

A. Lévesque, P. Desjardins, R. Leonelli et R. A. Masut, Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots. Phys. Rev. B 83, 23530 (2011).

S. Gélinas, K. R. Kirov, C.-N. Brosseau, O. Paré-Labrosse, S. Albert-Seifried, C. R. Mc-Neill, I. A. Howard, R. Leonelli, R. H. Friend et C. Silva,  The binding energy of charge-transfer excitons localised at polymeric semiconductor heterojunctions. J. Phys. Chem. C 115, 7114 (2011).

B. Gosselin, V. Cardin, A. Favron, J. De Jonghe, L.-I. Dion-Bertrand, C. Silva et R. Leonelli, Persistent polarization memory in sexithiophene nanostructures. Phys. Rev. B 83, 041201(R) (2011).

C.-N. Brosseau, M. Perrin, C. Silva et R. Leonelli, Carrier recombination dynamics in InGaN/GaN multiple quantum wells. Phys. Rev. B 82, 085305 (2010). 

G. Gélinas, A. Lanacer, R. Leonelli, R. A. Masut et P. J. Poole, Carrier thermal escape in families of InAs/InP self-assembled quantum dots. Phys. Rev. B 81, 235426 (2010). 

Courses given in the Department this term

Directed theses and dissertations available in Papyrus